Infineon HEXFET N-Channel MOSFET, 46 A, 250 V Enhancement TO-220 IRFB4229PBF
- RS Stock No.:
- 257-9346
- Mfr. Part No.:
- IRFB4229PBF
- Manufacturer:
- Infineon
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MYR567.90
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- 350 unit(s) ready to ship from another location
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Units | Per Unit | Per Tube* |
|---|---|---|
| 50 - 50 | MYR11.358 | MYR567.90 |
| 100 - 450 | MYR9.293 | MYR464.65 |
| 500 - 950 | MYR8.073 | MYR403.65 |
| 1000 - 1950 | MYR7.197 | MYR359.85 |
| 2000 + | MYR7.071 | MYR353.55 |
*price indicative
- RS Stock No.:
- 257-9346
- Mfr. Part No.:
- IRFB4229PBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 46A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 46mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 10V | |
| Typical Gate Charge Qg @ Vgs | 72nC | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 46A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 46mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 10V | ||
Typical Gate Charge Qg @ Vgs 72nC | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 250V Maximum Drain-Source Voltage, 46A Maximum Continuous Drain Current - IRFB4229PBF
This MOSFET is a through-hole N-channel power transistor designed for switching and amplification in high-voltage circuitry. It operates across a wide temperature span and is suitable for applications requiring robust gate-drive characteristics and moderate on-resistance in a TO-220 package.
Features and Benefits:
• 46A continuous current enables high-load switching capability
• 46mΩ Rds(on) reduces conduction losses in power paths
• 250V drain-source rating permits high-voltage operation
• 72nC typical gate charge supports predictable switching behaviour
• 10V maximum gate-source voltage allows standard gate-drive levels
• 46mΩ Rds(on) reduces conduction losses in power paths
• 250V drain-source rating permits high-voltage operation
• 72nC typical gate charge supports predictable switching behaviour
• 10V maximum gate-source voltage allows standard gate-drive levels
Applications
• Used for high-voltage power conversion stages
• Suitable for discrete motor-drive switching elements
• Ideal for general-purpose through-hole power boards
• Can be used for industrial control switching modules
• Used with thermal management in elevated-temperature systems
• Suitable for discrete motor-drive switching elements
• Ideal for general-purpose through-hole power boards
• Can be used for industrial control switching modules
• Used with thermal management in elevated-temperature systems
What package type is supplied for mounting convenience?
It is offered in a TO-220 through-hole package for easy PCB fastening and heat-sinking.
What temperature range can it withstand during operation?
The device is rated to function from -40°C up to 175°C.
What gate-drive constraints should be observed?
The gate-source voltage must not exceed 10V to avoid damaging the gate oxide.
Is this device suitable for automotive-standard specification use?
It is not specified as meeting automotive standards and should not be assumed to be automotive-grade.
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