Infineon HEXFET N-Channel MOSFET, 3.7 A, 200 V, 8-Pin SO-8 IRF7820TRPBF

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Subtotal (1 pack of 5 units)*

MYR38.67

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Units
Per Unit
Per Pack*
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5 - 45MYR7.734MYR38.67-
50 - 95MYR7.16MYR35.80MYR28.70
100 - 495MYR6.624MYR33.12MYR111.00
500 - 1995MYR6.132MYR30.66MYR801.00
2000 +MYR5.674MYR28.37MYR4,120.00

*price indicative

Packaging Options:
RS Stock No.:
257-9320
Mfr. Part No.:
IRF7820TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

3.7A

Maximum Drain Source Voltage Vds

200V

Package Type

SO-8

Series

HEXFET

Mount Type

Through Hole

Pin Count

8

Maximum Drain Source Resistance Rds

78mΩ

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

29nC

Maximum Power Dissipation Pd

2.5W

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Height

330mm

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRF series is the 200V single n channel HEXFET power mosfet in a SO 8 package.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Normal level is Optimized for 10 V gate drive voltage

Industry standard surface mount package

Capable of being wave soldered

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