Infineon Type N-Channel MOSFET, 131 A, 55 V TO-263 IRF1405STRLPBF
- RS Stock No.:
- 257-9276
- Distrelec Article No.:
- 304-40-516
- Mfr. Part No.:
- IRF1405STRLPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
MYR48.69
FREE delivery for orders over RM 500.00
In Stock
- Plus 680 unit(s) shipping from 19 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 20 | MYR9.738 | MYR48.69 |
| 25 - 45 | MYR8.794 | MYR43.97 |
| 50 - 95 | MYR8.62 | MYR43.10 |
| 100 - 245 | MYR7.422 | MYR37.11 |
| 250 + | MYR7.27 | MYR36.35 |
*price indicative
- RS Stock No.:
- 257-9276
- Distrelec Article No.:
- 304-40-516
- Mfr. Part No.:
- IRF1405STRLPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 131A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 5.3mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 200W | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 170nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 131A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 5.3mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 200W | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 170nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon IRF series is the 55V single n channel HEXFET power mosfet in a D2 Pak package.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below 100 kHz
Industry standard surface mount power package
Capable of being wave soldered
Related links
- Infineon Type N-Channel MOSFET 55 V TO-263
- Infineon HEXFET Type N-Channel MOSFET 55 V TO-263
- Infineon HEXFET Type N-Channel MOSFET 55 V TO-263
- Infineon HEXFET Type N-Channel MOSFET 55 V TO-263 IRFZ48NSTRLPBF
- Infineon HEXFET Type N-Channel MOSFET 55 V TO-263 IRL3705NSTRLPBF
- Infineon HEXFET Type N-Channel MOSFET 55 V, 3-Pin TO-263
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- Infineon IPD Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 IPD029N04NF2SATMA1