Vishay IRFU310 Type N-Channel Power MOSFET, 1.7 A, 400 V, 3-Pin IPAK IRFU310PBF
- RS Stock No.:
- 256-7320
- Mfr. Part No.:
- IRFU310PBF
- Manufacturer:
- Vishay
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View bulk pricing optionsSubtotal (1 reel of 3000 units)*
MYR8,949.00
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- Shipping from 21 December 2026
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Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | MYR2.983 | MYR8,949.00 |
| 6000 + | MYR2.939 | MYR8,817.00 |
*price indicative
- RS Stock No.:
- 256-7320
- Mfr. Part No.:
- IRFU310PBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.7A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Series | IRFU310 | |
| Package Type | IPAK | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.6Ω | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Maximum Power Dissipation Pd | 25W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.39mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.7A | ||
Maximum Drain Source Voltage Vds 400V | ||
Series IRFU310 | ||
Package Type IPAK | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.6Ω | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Maximum Power Dissipation Pd 25W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Height 2.39mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay IRFU310 Series Power MOSFET, 400V Drain Source Voltage, 1.7A Continuous Drain Current - IRFU310PBF
This power MOSFET is a high-voltage switching transistor designed for surface-mount applications where rugged thermal tolerance and controlled gate behaviour are required. It operates across a wide temperature span and is suitable for power conversion and high-voltage switching circuits that demand modest continuous current and conservative on-resistance.
Features and Benefits:
• 400V drain-to-source capability supports high-voltage applications
• 3.6Ω Rds on reduces conduction loss in low-current designs
• 25W power dissipation enables sustained thermal loading
• 1.7A continuous drain current suits moderate load requirements
• 12nC typical gate charge provides faster switching with lower drive
• 20V maximum gate-source voltage allows flexible gate drive choices
• 3.6Ω Rds on reduces conduction loss in low-current designs
• 25W power dissipation enables sustained thermal loading
• 1.7A continuous drain current suits moderate load requirements
• 12nC typical gate charge provides faster switching with lower drive
• 20V maximum gate-source voltage allows flexible gate drive choices
Applications
• Suitable for high-voltage switch-mode power supplies
• Ideal for motor control in low-current systems
• Used for lighting ballasts and LED driver stages
• Can be used for intermediate power converters
• Used with thermal management for compact power modules
• Ideal for motor control in low-current systems
• Used for lighting ballasts and LED driver stages
• Can be used for intermediate power converters
• Used with thermal management for compact power modules
What mounting arrangement does it require on a board?
It is supplied in an IPAK-style surface-mount package that facilitates soldered attachment to a PCB and supports thermal transfer through the package body.
How does it tolerate extreme ambient temperatures during operation?
The device is rated to function down to -55°C and up to +150°C, allowing use in environments with wide temperature fluctuations.
What gate drive limitation must designers observe?
Gate voltage must not exceed 20V to avoid overstressing the gate oxide
designers should provide appropriate gate‑drive clamping or level shifting.
Are there any environmental or materials restrictions relevant to procurement?
The component meets RoHS requirements, indicating restricted use of certain hazardous substances in its manufacture.
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