Infineon IPT Type N-Channel MOSFET, 400 A, 40 V Enhancement, 8-Pin HSOF-8
- RS Stock No.:
- 250-0594
- Mfr. Part No.:
- IPT60R055CFD7XTMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 2000 units)*
MYR50,758.00
FREE delivery for orders over RM 500.00
Temporarily out of stock
- Shipping from 01 June 2026
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Units | Per Unit | Per Reel* |
|---|---|---|
| 2000 - 2000 | MYR25.379 | MYR50,758.00 |
| 4000 - 4000 | MYR24.618 | MYR49,236.00 |
| 6000 + | MYR23.879 | MYR47,758.00 |
*price indicative
- RS Stock No.:
- 250-0594
- Mfr. Part No.:
- IPT60R055CFD7XTMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 400A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | HSOF-8 | |
| Series | IPT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 400A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type HSOF-8 | ||
Series IPT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications such as phase shift full-bridge (ZVS) and LLC resulting from reduced gate charge(Qg), best-in-class reverse recovery charge (Qrr) and improved turn off behaviour CoolMOS CFD7 offers highest efficiency in resonant topologies.
Best-in-class RDS(on) in SMD and THD packages
Excellent hard commutation ruggedness
Highest reliability for resonant topologies
Highest efficiency with outstanding ease-of-use / performance trade-off
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