Infineon BSZ Type N, Type P-Channel MOSFET, 5.10 A, +20 V P, 8-Pin PQFN BSZ15DC02KDHXTMA1
- RS Stock No.:
- 250-0564
- Mfr. Part No.:
- BSZ15DC02KDHXTMA1
- Manufacturer:
- Infineon
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MYR31.26
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- 340 unit(s) shipping from 11 February 2027
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | MYR6.252 | MYR31.26 |
| 10 - 95 | MYR5.626 | MYR28.13 |
| 100 - 245 | MYR5.062 | MYR25.31 |
| 250 - 495 | MYR4.556 | MYR22.78 |
| 500 + | MYR4.098 | MYR20.49 |
*price indicative
- RS Stock No.:
- 250-0564
- Mfr. Part No.:
- BSZ15DC02KDHXTMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N, Type P | |
| Maximum Continuous Drain Current Id | 5.10A | |
| Maximum Drain Source Voltage Vds | +20V | |
| Package Type | PQFN | |
| Series | BSZ | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Channel Mode | P | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N, Type P | ||
Maximum Continuous Drain Current Id 5.10A | ||
Maximum Drain Source Voltage Vds +20V | ||
Package Type PQFN | ||
Series BSZ | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Channel Mode P | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon BSZ Series MOSFET, 20V Maximum Drain‑Source Voltage, 5.10A Maximum Continuous Drain Current - BSZ15DC02KDHXTMA1
This MOSFET is a dual‑channel semiconductor device designed for surface‑mount power switching in Compact electronics. It supports both N‑ and P‑channel operation, is supplied in an 8‑pin PQFN package, and is intended for applications requiring moderate current handling and controlled gate drive. The component conforms to RoHS and is specified for extended temperature environments.
Features and Benefits:
• 150mΩ Rds(on) reduces conduction losses during switching
• 80 nC typical gate charge enables predictable gate‑drive sizing
• 20V maximum Vds supports low‑voltage power rails
• 5.10A continuous drain current handles sustained load currents
• 81W power dissipation allows high transient energy handling
• 80 nC typical gate charge enables predictable gate‑drive sizing
• 20V maximum Vds supports low‑voltage power rails
• 5.10A continuous drain current handles sustained load currents
• 81W power dissipation allows high transient energy handling
Applications
• Suitable for point‑of‑load switching regulators
• Ideal for synchronous buck converter stages
• Used with mixed‑signal power‑management circuits
• Can be used for battery protection and load switching
• Suitable for Compact surface‑mount power modules
• Ideal for synchronous buck converter stages
• Used with mixed‑signal power‑management circuits
• Can be used for battery protection and load switching
• Suitable for Compact surface‑mount power modules
What temperature range can it operate within?
It is rated for operation from -55°C up to 175°C.
What mounting and pin count does it require?
It is a surface‑mount component supplied in an 8‑pin PQFN package.
How does channel configuration affect circuit design?
Availability of both N‑channel and P‑channel types allows complementary topologies and simplified level shifting in bidirectional switches.
What gate‑drive considerations arise from the gate charge?
An 80 nC gate charge requires a gate driver sized for the intended switching speed to manage transition energy and switching losses.
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