Infineon IPD Type N-Channel MOSFET, 80 A, 75 V Enhancement, 3-Pin TO-252 IPD90N03S4L03ATMA1

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Subtotal (1 pack of 2 units)*

MYR7.76

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Units
Per Unit
Per Pack*
2 - 8MYR3.88MYR7.76
10 - 98MYR3.495MYR6.99
100 - 248MYR3.145MYR6.29
250 - 498MYR2.835MYR5.67
500 +MYR2.555MYR5.11

*price indicative

Packaging Options:
RS Stock No.:
249-6911
Mfr. Part No.:
IPD90N03S4L03ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

75V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.7mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

80nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

81W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS is power MOSFET for automotive applications. Operating channel is N. It is AEC Q101 qualified. MSL1 up to 260°C peak reflow. Green Product (RoHS compliant) and it is 100% Avalanche tested.

175°C operating temperature

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