Infineon Half and Full Bridge (2X) Configuration BTN99x0LV 2 Type P, Type N-Channel MOSFET, 115 A, 40 V Dual, 7-Pin PG

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MYR22.60

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Units
Per Unit
1 - 9MYR22.60
10 - 99MYR20.35
100 - 249MYR18.34
250 - 499MYR16.47
500 +MYR14.83

*price indicative

Packaging Options:
RS Stock No.:
249-3347
Mfr. Part No.:
BTN9990LVAUMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P, Type N

Maximum Continuous Drain Current Id

115A

Maximum Drain Source Voltage Vds

40V

Package Type

PG HSOF-7

Series

BTN99x0LV

Mount Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance Rds

9.6mΩ

Channel Mode

Dual

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-40°C

Transistor Configuration

Half and Full Bridge (2X) Configuration

Maximum Operating Temperature

150°C

Standards/Approvals

AEC-Q100/Q006 (Grade 1)

Number of Elements per Chip

2

Automotive Standard

AEC-Q006, AEC-Q100

Infineon BTN99x0LV Series MOSFET, 40V Maximum Drain Source Voltage, 115A Maximum Continuous Drain Current - BTN9990LVAUMA1


This MOSFET is a dual-channel transistor designed for switching and bridge configurations in automotive environments. It supports both half-bridge and full-bridge arrangements and is supplied in a PG HSOF-7 package suitable for modules requiring compact, dual-element power devices. The device is rated for operation across an extended temperature range and conforms to automotive-grade standards for use in vehicle systems.

Features and Benefits:


• 40V maximum drain voltage for common automotive system voltages
• 115A continuous drain current for high-current switching
• 9.6mΩ Rds(on) for reduced conduction losses
• ±20V gate tolerance to protect gate circuitry
• Dual N and P channel arrangement enabling complementary stages
• 150°C maximum operating temperature for thermal headroom

Applications


• Suitable for half and full bridge power stages in vehicles
• Ideal for DC motor drive inverter stages in automotive systems
• Used with complementary P and N channel configurations in H-bridges
• Can be used for high-current switching in battery management
• Used for power stages requiring automotive-grade components

What temperature extremes can this device tolerate in operation?


It can operate down to -40°C and up to 150°C.

How many transistor elements are present on each chip?


Each chip contains two elements arranged as a dual-channel device.

What package does it use for board mounting and thermal conduction?


The component is supplied in a PG HSOF-7 package.

Which automotive qualification levels does it satisfy?


It meets AEC-Q100 and AEC-Q006 automotive-grade approvals.

What channel types are integrated for complementary switching topologies?


The device includes both N-channel and P-channel types.

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