ROHM RW4E065GN N-Channel MOSFET, 10.7 A, 30 V Enhancement, 7-Pin HEML1616L7 RW4E065GNTCL1
- RS Stock No.:
- 249-1136
- Mfr. Part No.:
- RW4E065GNTCL1
- Manufacturer:
- ROHM
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 249-1136
- Mfr. Part No.:
- RW4E065GNTCL1
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 10.7A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | HEML1616L7 | |
| Series | RW4E065GN | |
| Mount Type | Surface Mount | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 2.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 104W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Typical Gate Charge Qg @ Vgs | 4.3nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 10.7A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type HEML1616L7 | ||
Series RW4E065GN | ||
Mount Type Surface Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 2.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 104W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Typical Gate Charge Qg @ Vgs 4.3nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ROHM N channel power MOSFET with low on-resistance and fast switching, suitable for the switching application, has 30 V drain-source voltage and 6.5 A drain current, taping packing type.
Low on-resistance
Pb-free plating
RoHS compliant
Halogen free
Related links
- DiodesZetex N-Channel MOSFET 12 V Enhancement, 8-Pin PowerDI3333-8 DMTH10H032LFVW-7
- DiodesZetex N-Channel MOSFET 12 V Enhancement, 8-Pin PowerDI3333-8
- ROHM RF9 N-Channel MOSFET 40 V Enhancement, 7-Pin DFN RF9G120BKFRATCR
- ROHM BM2P N-Channel MOSFET 730 V Enhancement, 7-Pin DIP-7K BM2P06A3J-Z
- ROHM BM2P N-Channel MOSFET 730 V Enhancement, 7-Pin DIP-7K BM2P10A3J-Z
- ROHM BM2P N-Channel MOSFET 730 V Enhancement, 7-Pin DIP-7K BM2P13B1J-Z
- ROHM BM2P N-Channel MOSFET 730 V Enhancement, 7-Pin DIP-7K BM2P13A1J-Z
- ROHM BM2P N-Channel MOSFET 730 V Enhancement, 7-Pin DIP-7K BM2P13A3J-Z