onsemi SiC Power Module, 1200 V F1-2PACK NXH010P120MNF1PTG

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Subtotal (1 unit)*

MYR979.40

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Units
Per Unit
1 - 1MYR979.40
2 - 4MYR964.72
5 - 9MYR950.25
10 - 14MYR935.98
15 +MYR921.95

*price indicative

Packaging Options:
RS Stock No.:
248-5824
Mfr. Part No.:
NXH010P120MNF1PTG
Manufacturer:
onsemi
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Brand

onsemi

Product Type

SiC Power Module

Maximum Drain Source Voltage Vds

1200V

Package Type

F1-2PACK

Mount Type

Through Hole

Minimum Operating Temperature

-40°C

Maximum Power Dissipation Pd

250W

Maximum Gate Source Voltage Vgs

25 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

SiC Module - EliteSiC 2-PACK Half Bridge Topology, 1200 V, 10 mohm SiC M1 MOSFET Press-fit pins, Thermal Interface Material


The ON Semiconductor is a power module containing an 10 mohm/1200 V SiC MOSFET half bridge and a thermistor in an F1 package.

10 mohm/1200 V SiC MOSFET half bridge

Options with pre−applied thermal interface material and without pre−applied TIM

Press−fit pins

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