DiodesZetex 2 Type N-Channel MOSFET, 50 V Enhancement, 6-Pin SOT-563 DMN53D0LV-7
- RS Stock No.:
- 246-7518
- Mfr. Part No.:
- DMN53D0LV-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
MYR28.30
FREE delivery for orders over RM 500.00
Temporarily out of stock
- 3,000 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 25 | MYR1.132 | MYR28.30 |
| 50 - 75 | MYR1.095 | MYR27.38 |
| 100 - 225 | MYR1.059 | MYR26.48 |
| 250 - 975 | MYR1.024 | MYR25.60 |
| 1000 + | MYR0.991 | MYR24.78 |
*price indicative
- RS Stock No.:
- 246-7518
- Mfr. Part No.:
- DMN53D0LV-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | SOT-563 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 4.5Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.4V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 1.5 V | |
| Maximum Power Dissipation Pd | 430mW | |
| Typical Gate Charge Qg @ Vgs | 0.6nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type SOT-563 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 4.5Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.4V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 1.5 V | ||
Maximum Power Dissipation Pd 430mW | ||
Typical Gate Charge Qg @ Vgs 0.6nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The DiodesZetex makes a dual N-channel MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. It offers fast switching speed, low input/ output leakage. The ultra-small surface mount package is ESD protected to 2KV.
Low On-Resistance Very low Gate Threshold voltage Low input Capacitance
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