Infineon IPN N-Channel MOSFET, 100 A, 650 V, 3-Pin SOT-223 IPN60R360PFD7SATMA1

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Subtotal (1 pack of 5 units)*

MYR26.70

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Units
Per Unit
Per Pack*
5 - 5MYR5.34MYR26.70
10 - 95MYR5.07MYR25.35
100 - 245MYR4.822MYR24.11
250 - 495MYR4.58MYR22.90
500 +MYR4.352MYR21.76

*price indicative

Packaging Options:
RS Stock No.:
244-2269
Mfr. Part No.:
IPN60R360PFD7SATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

650V

Package Type

SOT-223

Series

IPN

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3mΩ

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Power Dissipation Pd

81W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon 600V CoolMOS™ PFD7 superjunction MOSFET (IPN60R360PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPN60R360PFD7S in a SOT-223 package features RDS(on) of 360mOhm resulting in low switching losses.

Very low FOM RDS(on) x Eoss

Integrated robust fast body diode

Up to 2kV ESD protection

Wide range of RDS(on) values

Excellent commutation ruggedness

Low EMI

Broad package portfolio

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