Infineon IAUZ Type N-Channel MOSFET, 120 A, 40 V Enhancement, 8-Pin SuperSO8 5 x 6 IAUZ30N10S5L240ATMA1
- RS Stock No.:
- 244-1574
- Mfr. Part No.:
- IAUZ30N10S5L240ATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
MYR14.34
FREE delivery for orders over RM 500.00
In Stock
- Plus 19,955 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | MYR2.868 | MYR14.34 |
| 10 - 95 | MYR2.716 | MYR13.58 |
| 100 - 245 | MYR2.576 | MYR12.88 |
| 250 - 495 | MYR2.424 | MYR12.12 |
| 500 + | MYR2.284 | MYR11.42 |
*price indicative
- RS Stock No.:
- 244-1574
- Mfr. Part No.:
- IAUZ30N10S5L240ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SuperSO8 5 x 6 | |
| Series | IAUZ | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SuperSO8 5 x 6 | ||
Series IAUZ | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon has MOSFET which is OptiMOS power MOSFET for automotive applications, N-channel-Enhancement mode-Logic Level and AEC Q101 qualified.
N Channel
100% Avalanche tested
AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
Related links
- Infineon IAUZ Type N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon IAUZ Type N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO8 5 x 6 IAUZ20N08S5L300ATMA1
- Infineon IAUC Type N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO8 5 x 6 IAUC120N04S6L005ATMA1
- Infineon IAUC Type N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO8 5 x 6 IAUC120N04S6N006ATMA1
- Infineon IAUC Type N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO8 5 x 6 IAUC100N10S5L040ATMA1
- Infineon IAUC Type N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon IAUC Type N-Channel MOSFET 40 V Enhancement, 8-Pin SuperSO8 5 x 6
- Infineon IAUC Type N-Channel MOSFET 20 V Enhancement, 8-Pin SuperSO8 5 x 6 IAUC60N04S6N044ATMA1