Infineon IRFH N-Channel MOSFET, 11 A, 40 V, 8-Pin PQFN IRL100HS121
- RS Stock No.:
- 243-9301
- Mfr. Part No.:
- IRL100HS121
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
MYR21.17
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In Stock
- Plus 3,860 unit(s) shipping from 19 October 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | MYR4.234 | MYR21.17 |
| 10 - 95 | MYR4.028 | MYR20.14 |
| 100 - 245 | MYR3.822 | MYR19.11 |
| 250 - 495 | MYR3.614 | MYR18.07 |
| 500 + | MYR3.408 | MYR17.04 |
*price indicative
- RS Stock No.:
- 243-9301
- Mfr. Part No.:
- IRL100HS121
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IRFH | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IRFH | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon IRL100HS121 N-Channel Power MOSFET available in three different voltage classes (60V, 80V and 100V), Infineon’s new logic level power MOSFETs are highly suitable for wireless charging, telecom and adapter applications. The PQFN 2x2 package is especially suited for high speed switching and form factor critical applications. It enables higher power density and improved efficiency as well as significant space saving.
Lowest FOM (R DS(on) x Q g/gd)
Optimized Q g, C oss, and Q rr for fast switching
Logic level compatibility
Tiny PQFN 2x2mm package
Higher power density designs
Higher switching frequency
Uses OptiMOSTM5 Chip
Reduced parts count wherever 5V supplies are available
Driven directly from microcontrollers (slow switching)
System cost reductions
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