Infineon IQE N-Channel MOSFET, 253 A, 30 V, 8-Pin PQFN IQE006NE2LM5CGATMA1

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Subtotal (1 pack of 2 units)*

MYR27.19

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Units
Per Unit
Per Pack*
2 - 8MYR13.595MYR27.19
10 - 98MYR13.30MYR26.60
100 - 248MYR13.005MYR26.01
250 - 498MYR12.71MYR25.42
500 +MYR12.415MYR24.83

*price indicative

Packaging Options:
RS Stock No.:
242-0307
Mfr. Part No.:
IQE006NE2LM5CGATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

253A

Maximum Drain Source Voltage Vds

30V

Series

IQE

Package Type

PQFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.2mΩ

Forward Voltage Vf

730mV

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Length

3.3mm

Automotive Standard

AEC-Q101

The Infineon OptiMOS 5 power transistor is a N channel MOSFET which has Pb-free lead plating and is RoHS compliant. It is 100% avalanche tested.

Halogen-free according to IEC61249-2-21

Fully qualified according to JEDEC for Industrial Applications

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