Infineon IQE Type N-Channel MOSFET, 253 A, 30 V, 8-Pin PQFN IQE006NE2LM5ATMA1
- RS Stock No.:
- 242-0305
- Mfr. Part No.:
- IQE006NE2LM5ATMA1
- Manufacturer:
- Infineon
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Subtotal (1 pack of 2 units)*
MYR21.28
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In Stock
- 4,916 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | MYR10.64 | MYR21.28 |
| 10 - 98 | MYR10.415 | MYR20.83 |
| 100 - 248 | MYR10.19 | MYR20.38 |
| 250 - 498 | MYR9.965 | MYR19.93 |
| 500 + | MYR9.74 | MYR19.48 |
*price indicative
- RS Stock No.:
- 242-0305
- Mfr. Part No.:
- IQE006NE2LM5ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 253A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PQFN | |
| Series | IQE | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.2mΩ | |
| Forward Voltage Vf | 0.73V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 253A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PQFN | ||
Series IQE | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.2mΩ | ||
Forward Voltage Vf 0.73V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 3.3mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS 5 power transistor is a N channel MOSFET which has very low on resistance. It is fully qualified according to JEDEC for Industrial Applications.
100% avalanche tested
Superior thermal resistance
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