Microchip MSC090SMA070B N-Channel MOSFET, 20 A, 700 V TO-247 MSC090SMA070B
- RS Stock No.:
- 241-9272
- Mfr. Part No.:
- MSC090SMA070B
- Manufacturer:
- Microchip
This image is representative of the product range
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View bulk pricing optionsSubtotal (1 tube of 30 units)*
MYR1,011.75
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- Shipping from 07 December 2026
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Units | Per Unit | Per Tube* |
|---|---|---|
| 30 - 90 | MYR33.725 | MYR1,011.75 |
| 120 + | MYR31.015 | MYR930.45 |
*price indicative
- RS Stock No.:
- 241-9272
- Mfr. Part No.:
- MSC090SMA070B
- Manufacturer:
- Microchip
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | MSC090SMA070B | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 8Ω | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Gate Source Voltage Vgs | 2V | |
| Forward Voltage Vf | 1.8V | |
| Maximum Power Dissipation Pd | 1.6W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series MSC090SMA070B | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 8Ω | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Gate Source Voltage Vgs 2V | ||
Forward Voltage Vf 1.8V | ||
Maximum Power Dissipation Pd 1.6W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip silicon carbide power MOSFET product line from Micro semi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high voltage applications.
Low capacitances and low gate charge
Fast switching speed due to low internal gate resistance
Stable operation at high junction temperature TJ(max) equal to 175 °C
Fast and reliable body diode
Superior avalanche ruggedness
RoHS compliant