Nexperia Type N-Channel MOSFET, 10.3 A, 30 V, 4-Pin LFPAK56E

RS Stock No.:: 240-1974
Mfr. Part No.:: PSMN2R0-55YLHX
Manufacturer:: Nexperia

Nexperia Type N-Channel MOSFET, 10.3 A, 30 V, 4-Pin LFPAK56E

This image is representative of the product range

Subtotal (1 reel of 1500 units)*

MYR16,387.50

FREE delivery for orders over RM 500.00

Temporarily out of stock

1,500 left, ready to ship from another location

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Units	Per Unit	Per Reel*
1500 +	MYR10.925	MYR16,387.50

*price indicative

RS Stock No.:: 240-1974
Mfr. Part No.:: PSMN2R0-55YLHX
Manufacturer:: Nexperia

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Nexperia
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	10.3A
	Maximum Drain Source Voltage Vds	30V
	Package Type	LFPAK56E
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	13.6mΩ
	Maximum Power Dissipation Pd	12.5W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Nexperia
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 10.3A
	Maximum Drain Source Voltage Vds 30V
	Package Type LFPAK56E
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 13.6mΩ
	Maximum Power Dissipation Pd 12.5W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - PSMN2R0-55YLHX

The Nexperia N-channel enhancement mode MOSFET is in LFPAK56E package. The ASFET is particularly suited to 36 V battery powered applications requiring strong avalanche capability, linear mode performance, use at high switching frequencies, and also safe a

Qualified to 175 °C

Avalanche rated, 100% tested

Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies

Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for low EMI designs

Unique “SchottkyPlus” technology for Schottky-like switching performance and low IDSS leakage

Narrow VGS(th) rating for easy paralleling and improved current sharing

Very strong linear-mode / safe operating area characteristics for safe and reliable switching at high-current conditions

Nexperia Type N-Channel MOSFET, 10.3 A, 30 V, 4-Pin LFPAK56E

FREE delivery for orders over RM 500.00

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