Vishay Type N-Channel MOSFET, 445 A, 30 V Depletion, 4-Pin PowerPAK (8x8L) SQJQ112E-T1_GE3

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Subtotal (1 pack of 2 units)*

MYR35.83

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Units
Per Unit
Per Pack*
2 - 48MYR17.915MYR35.83
50 - 98MYR16.58MYR33.16
100 - 248MYR15.34MYR30.68
250 - 998MYR14.20MYR28.40
1000 +MYR13.15MYR26.30

*price indicative

Packaging Options:
RS Stock No.:
239-8676
Mfr. Part No.:
SQJQ112E-T1_GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

445A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK (8x8L)

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

0.00253Ω

Channel Mode

Depletion

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

255W

Typical Gate Charge Qg @ Vgs

43nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.1V

Maximum Operating Temperature

125°C

Standards/Approvals

No

Width

4.9 mm

Length

6.15mm

Automotive Standard

AEC-Q101

The Vishay TrenchFET® is automotive Gen IV power N-Channel MOSFET which operates at 100 V and 175 °C temperature. This MOSFET used for high power density.

AEC-Q101 qualified

UIS tested

Thin package

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