STMicroelectronics STD Type N-Channel MOSFET, 55 A, 650 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 239-6330P
- Mfr. Part No.:
- STD86N3LH5
- Manufacturer:
- STMicroelectronics
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MYR68.70
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Units | Per Unit |
|---|---|
| 10 - 95 | MYR6.87 |
| 100 - 245 | MYR6.734 |
| 250 - 495 | MYR6.598 |
| 500 + | MYR6.466 |
*price indicative
- RS Stock No.:
- 239-6330P
- Mfr. Part No.:
- STD86N3LH5
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | STD | |
| Package Type | TO-252 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 70W | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.6mm | |
| Height | 2.4mm | |
| Standards/Approvals | UL | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series STD | ||
Package Type TO-252 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 70W | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 6.6mm | ||
Height 2.4mm | ||
Standards/Approvals UL | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics MOSFET device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET H5 technology. This device has been optimized to achieve very low on-state resistance.
Low on-resistance RDSon
High avalanche ruggedness
Low gate drive power losses
30 V Vdss
80 A Id