Vishay SiR Type N-Channel MOSFET, 116 A, 80 V, 8-Pin PowerPAK SO-8 SiR582DP-T1-RE3
- RS Stock No.:
- 239-5387
- Mfr. Part No.:
- SiR582DP-T1-RE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
MYR31.49
FREE delivery for orders over RM 500.00
In Stock
- 3,275 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 45 | MYR6.298 | MYR31.49 |
| 50 - 95 | MYR5.828 | MYR29.14 |
| 100 - 245 | MYR5.396 | MYR26.98 |
| 250 - 995 | MYR4.992 | MYR24.96 |
| 1000 + | MYR4.622 | MYR23.11 |
*price indicative
- RS Stock No.:
- 239-5387
- Mfr. Part No.:
- SiR582DP-T1-RE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 116A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerPAK SO-8 | |
| Series | SiR | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0034Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 92.5W | |
| Typical Gate Charge Qg @ Vgs | 33.5nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.15mm | |
| Width | 5.15 mm | |
| Standards/Approvals | RoHS | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 116A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerPAK SO-8 | ||
Series SiR | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0034Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 92.5W | ||
Typical Gate Charge Qg @ Vgs 33.5nC | ||
Maximum Operating Temperature 150°C | ||
Length 6.15mm | ||
Width 5.15 mm | ||
Standards/Approvals RoHS | ||
The Vishay TrenchFET N channel power MOSFET has drain current of 116 A. It is used in synchronous rectification, primary side switch, DC/DC converter and motor drive switch.
Very low RDS x Qg figure-of-merit (FOM)
Tuned for the lowest RDS x Qoss FOM
100 % Rg and UIS tested
Related links
- Vishay SiR Type N-Channel MOSFET 80 V, 8-Pin PowerPAK SO-8 SiR582DP-T1-RE3
- Vishay SiR Type N-Channel MOSFET 80 V, 8-Pin PowerPAK SO-8 SiR584DP-T1-RE3
- Vishay SiR Type N-Channel MOSFET 80 V, 8-Pin PowerPAK SO-8 SiR586DP-T1-RE3
- Vishay SiR Type N-Channel MOSFET 80 V, 8-Pin PowerPAK SO-8 SiR588DP-T1-RE3
- Vishay SiR Type N-Channel MOSFET 60 V, 8-Pin PowerPAK SO-8 SiR4602LDP-T1-RE3
- Vishay SiR Type N-Channel MOSFET 150 V Enhancement, 8-Pin PowerPAK SO-8 SIR5708DP-T1-RE3
- Vishay SiR Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK SO-8 SIR184LDP-T1-RE3
- Vishay SiR Type N-Channel MOSFET 150 V Enhancement, 8-Pin PowerPAK SO-8 SIR5710DP-T1-RE3