Infineon OptiMOS™ Type N-Channel MOSFET, 237 A, 120 V, 8-Pin HSOF-8 IPT030N12N3GATMA1
- RS Stock No.:
- 236-3669
- Mfr. Part No.:
- IPT030N12N3GATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 2000 units)*
MYR43,334.00
FREE delivery for orders over RM 500.00
Temporarily out of stock
- Shipping from 18 June 2026
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Units | Per Unit | Per Reel* |
|---|---|---|
| 2000 - 2000 | MYR21.667 | MYR43,334.00 |
| 4000 - 4000 | MYR20.833 | MYR41,666.00 |
| 6000 + | MYR20.57 | MYR41,140.00 |
*price indicative
- RS Stock No.:
- 236-3669
- Mfr. Part No.:
- IPT030N12N3GATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 237A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Package Type | HSOF-8 | |
| Series | OptiMOS™ | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 375W | |
| Typical Gate Charge Qg @ Vgs | 158nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 10.58 mm | |
| Height | 2.4mm | |
| Length | 10.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 237A | ||
Maximum Drain Source Voltage Vds 120V | ||
Package Type HSOF-8 | ||
Series OptiMOS™ | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 375W | ||
Typical Gate Charge Qg @ Vgs 158nC | ||
Maximum Operating Temperature 175°C | ||
Width 10.58 mm | ||
Height 2.4mm | ||
Length 10.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon OptiMOS power MOSFET is the Ideal fit for battery-powered equipment, with optimal balance between additional voltage breakdown margin and low on-state resistance. It is used in light electric vehicle, low voltage drives and battery powered tools.
High power density and improved thermal management
Less board space needed
High system efficiency and less paralleling required
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