ROHM N-Channel MOSFET, 39 A, 100 V Enhancement, 8-Pin HSMT RQ3P300BHTB1

This image is representative of the product range

Currently unavailable
Sorry, we don't know when this will be back in stock.
RS Stock No.:
235-2774
Mfr. Part No.:
RQ3P300BHTB1
Manufacturer:
ROHM
Find similar products by selecting one or more attributes.
Select all

Brand

ROHM

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current (Id)

39 A

Maximum Drain Source Voltage (Vds)

100 V

Channel Mode

Enhancement

Pin Count

8

Package Type

HSMT

Automotive Standard

No

Forward Voltage (Vf)

1.2 V

Height

3.4 mm

Length

3.15 mm

Maximum Drain Source Resistance (Rds)

15.5 mΩ

Maximum Gate Source Voltage (Vgs)

20 V

Maximum Operating Temperature

150 °C

Maximum Power Dissipation (Pd)

2 W

Minimum Operating Temperature

-55 °C

Mount Type

Surface

Standards/Approvals

No

Typical Gate Charge (Qg) @ Vgs

36 nC

Width

850 μm

The ROHM N channel power MOSFET with low on state resistance has drain to source voltage of 100 V. It is Ideal for switching purpose.

Small surface mount package

Pb-free lead plating

RoHS compliant

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy