STMicroelectronics SCTW70N N-Channel MOSFET, 91 A, 1.2 kV Enhancement, 3-Pin Hip-247 SCTW70N120G2V
- RS Stock No.:
- 233-3023
- Mfr. Part No.:
- SCTW70N120G2V
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 233-3023
- Mfr. Part No.:
- SCTW70N120G2V
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 91A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Series | SCTW70N | |
| Package Type | Hip-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 21mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Forward Voltage Vf | 2.7V | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Maximum Power Dissipation Pd | 547W | |
| Maximum Operating Temperature | 200°C | |
| Height | 20.15mm | |
| Length | 15.75mm | |
| Width | 5.15mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 91A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Series SCTW70N | ||
Package Type Hip-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 21mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Forward Voltage Vf 2.7V | ||
Maximum Gate Source Voltage Vgs 22V | ||
Maximum Power Dissipation Pd 547W | ||
Maximum Operating Temperature 200°C | ||
Height 20.15mm | ||
Length 15.75mm | ||
Width 5.15mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the Sic material allow designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
Very high operating junction temperature capability (TJ = 200 °C)
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitances
Related links
- STMicroelectronics SCTW70N N-Channel MOSFET 1.2 kV Enhancement, 3-Pin Hip-247 SCTW70N120G2V
- STMicroelectronics SCTWA70N120G2V-4 N-Channel MOSFET 1.2 kV Enhancement, 4-Pin Hip-247 SCTWA70N120G2V-4
- STMicroelectronics SCT N-Channel MOSFET 1.2 kV Enhancement, 3-Pin Hip-247 SCT040W120G3AG
- STMicroelectronics SCTW40N N-Channel MOSFET 1.2 kV Enhancement, 3-Pin Hip-247 SCTW40N120G2V
- STMicroelectronics SCT N-Channel MOSFET 1.2 kV Enhancement, 3-Pin Hip-247 SCT025W120G3AG
- STMicroelectronics SCT N-Channel MOSFET 1.2 kV Enhancement, 3-Pin Hip-247 SCTW60N120G2
- STMicroelectronics SCTW N-Channel MOSFET 1.2 kV Enhancement, 4-Pin Hip-247 SCTWA60N120G2-4
- STMicroelectronics SCTWA40N12G24AG N-Channel MOSFET 1.2 kV Enhancement, 4-Pin Hip-247 SCTWA40N12G24AG