STMicroelectronics N-Channel MOSFET, 60 A, 1200 V Enhancement, 7-Pin H2PAK-7 SCTH60N120G2-7
- RS Stock No.:
- 233-0471P
- Mfr. Part No.:
- SCTH60N120G2-7
- Manufacturer:
- STMicroelectronics
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View bulk pricing optionsSubtotal 10 units (supplied on a continuous strip)*
MYR1,237.00
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Units | Per Unit |
|---|---|
| 10 - 99 | MYR123.70 |
| 100 - 249 | MYR121.25 |
| 250 - 499 | MYR118.82 |
| 500 + | MYR116.46 |
*price indicative
- RS Stock No.:
- 233-0471P
- Mfr. Part No.:
- SCTH60N120G2-7
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | H2PAK-7 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 0.052Ω | |
| Channel Mode | Enhancement | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type H2PAK-7 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 0.052Ω | ||
Channel Mode Enhancement | ||
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode.
Extremely low gate charge and input capacitance
Source sensing pin for increased efficiency