STMicroelectronics N-Channel MOSFET, 60 A, 1.2 kV Enhancement, 7-Pin H2PAK-7 SCTH60N120G2-7

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MYR126.23

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Units
Per Unit
1 - 9MYR126.23
10 - 99MYR123.70
100 - 249MYR121.25
250 - 499MYR118.82
500 +MYR116.46

*price indicative

Packaging Options:
RS Stock No.:
233-0471
Mfr. Part No.:
SCTH60N120G2-7
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current (Id)

60 A

Maximum Drain Source Voltage (Vds)

1.2 kV

Channel Mode

Enhancement

Pin Count

7

Package Type

H2PAK-7

Maximum Drain Source Resistance (Rds)

0.052 Ω

Mount Type

Surface

The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Very fast and robust intrinsic body diode.

Extremely low gate charge and input capacitance

Source sensing pin for increased efficiency

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