Infineon OptiMOS 5 Type N-Channel MOSFET, 97 A, 100 V, 8-Pin SO-8 ISC0806NLSATMA1
- RS Stock No.:
- 232-6767
- Mfr. Part No.:
- ISC0806NLSATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
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Subtotal (1 pack of 2 units)*
MYR22.76
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In Stock
- Plus 4,996 unit(s) shipping from 12 January 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | MYR11.38 | MYR22.76 |
| 10 - 98 | MYR10.805 | MYR21.61 |
| 100 - 248 | MYR10.27 | MYR20.54 |
| 250 - 498 | MYR9.755 | MYR19.51 |
| 500 + | MYR9.26 | MYR18.52 |
*price indicative
- RS Stock No.:
- 232-6767
- Mfr. Part No.:
- ISC0806NLSATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 97A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | OptiMOS 5 | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 7.1mΩ | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 49nC | |
| Maximum Power Dissipation Pd | 96W | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.1mm | |
| Height | 5.35mm | |
| Standards/Approvals | No | |
| Width | 1.2 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 97A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series OptiMOS 5 | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 7.1mΩ | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 49nC | ||
Maximum Power Dissipation Pd 96W | ||
Maximum Operating Temperature 175°C | ||
Length 6.1mm | ||
Height 5.35mm | ||
Standards/Approvals No | ||
Width 1.2 mm | ||
Automotive Standard No | ||
The Infineon's OptiMOS PD power MOSFET 100 V, are designed targeting USB-PD and adapter applications. It's SuperSO8 package offers fast ramp-up and optimized lead times. OptiMOS low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS PD features quality products in compact, lightweight packages.
Logic level availability
Excellent thermal behaviour
100% avalanche tested
Related links
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