onsemi SiC Power Type N-Channel MOSFET, 203 A, 100 V Enhancement, 7-Pin TO-263 NTBGS004N10G

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Subtotal (1 pack of 2 units)*

MYR56.25

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Units
Per Unit
Per Pack*
2 - 8MYR28.125MYR56.25
10 - 98MYR27.28MYR54.56
100 - 248MYR26.435MYR52.87
250 - 498MYR25.88MYR51.76
500 +MYR25.31MYR50.62

*price indicative

Packaging Options:
RS Stock No.:
229-6446
Mfr. Part No.:
NTBGS004N10G
Manufacturer:
onsemi
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

203A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

SiC Power

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

4.1mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

240W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

178nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Length

10.2mm

Height

9.4mm

Width

4.7 mm

Standards/Approvals

No

Automotive Standard

No

The ON Semiconductor power MOSFET has rugged technology for utmost reliability. It is specifically designed for wide SOA applications from a 48V bus.

Hot swap tolerant with superior SOA curve

ROHS compliant

Reduces conduction loss

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