Infineon IPZ Type N-Channel MOSFET, 20 A, 40 V Enhancement, 8-Pin PQFN
- RS Stock No.:
- 229-1849
- Mfr. Part No.:
- IPZ40N04S53R1ATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 5000 units)*
MYR13,445.00
FREE delivery for orders over RM 500.00
In Stock
- Plus 20,000 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 5000 - 5000 | MYR2.689 | MYR13,445.00 |
| 10000 - 10000 | MYR2.608 | MYR13,040.00 |
| 15000 + | MYR2.53 | MYR12,650.00 |
*price indicative
- RS Stock No.:
- 229-1849
- Mfr. Part No.:
- IPZ40N04S53R1ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PQFN | |
| Series | IPZ | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.1mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 71W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Width | 3.3 mm | |
| Length | 3.3mm | |
| Height | 1.05mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PQFN | ||
Series IPZ | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.1mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 71W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Width 3.3 mm | ||
Length 3.3mm | ||
Height 1.05mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon n channel normal level power MOSFET used for automotive applications. It has 175°C operating temperature and 100 percent avalanche tested.
It is RoHS compliant and AEC Q101 qualified
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