Vishay TrenchFET Type N-Channel MOSFET, 146 A, 80 V Enhancement, 8-Pin SO-8 SiR580DP-T1-RE3

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Subtotal (1 pack of 5 units)*

MYR45.34

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Units
Per Unit
Per Pack*
5 - 45MYR9.068MYR45.34
50 - 95MYR8.392MYR41.96
100 - 245MYR7.768MYR38.84
250 - 995MYR7.19MYR35.95
1000 +MYR6.654MYR33.27

*price indicative

Packaging Options:
RS Stock No.:
228-2908
Mfr. Part No.:
SiR580DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

146A

Maximum Drain Source Voltage Vds

80V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.7mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

104W

Typical Gate Charge Qg @ Vgs

50.6nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 80 V MOSFET.

100 % Rg and UIS tested

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