Vishay SiR N channel-Channel MOSFET, 146 A, 80 V Enhancement, 8-Pin PowerPAK SO-8 SiR580DP

N

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Subtotal (1 unit)*

MYR12.06

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Units
Per Unit
1 - 9MYR12.06
10 - 24MYR7.82
25 - 99MYR4.11
100 - 499MYR4.04
500 +MYR3.91

*price indicative

RS Stock No.:
735-135
Mfr. Part No.:
SiR580DP
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

146A

Maximum Drain Source Voltage Vds

80V

Package Type

PowerPAK SO-8

Series

SiR

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.0027Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

50.6nC

Maximum Power Dissipation Pd

104W

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

80V

Maximum Operating Temperature

150°C

Length

7mm

Height

2mm

Standards/Approvals

RoHS

Width

6mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-Channel power MOSFET rated for 80V drain-source voltage, Ideal for high-efficiency switching in AI power server and DC/DC converter applications. It delivers ultra-low on-resistance of 2.7mΩ maximum at 10V gate drive to minimize conduction losses under heavy loads.

146A continuous drain current at TC=25°C

76nC maximum total gate charge

-55°C to +150°C operating junction temperature

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