Vishay E Type N-Channel MOSFET, 165.3 A, 850 V Enhancement, 3-Pin TO-220 SIHP21N80AEF-GE3

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Subtotal (1 pack of 5 units)*

MYR77.38

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Per Unit
Per Pack*
5 - 5MYR15.476MYR77.38
10 - 20MYR14.326MYR71.63
25 - 95MYR13.26MYR66.30
100 - 495MYR12.274MYR61.37
500 +MYR11.362MYR56.81

*price indicative

Packaging Options:
RS Stock No.:
228-2879
Mfr. Part No.:
SIHP21N80AEF-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

165.3A

Maximum Drain Source Voltage Vds

850V

Series

E

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

250mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

47nC

Maximum Power Dissipation Pd

179W

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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