Vishay E Type N-Channel MOSFET, 9 A, 850 V Enhancement, 3-Pin TO-220

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Subtotal (1 tube of 50 units)*

MYR491.00

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Units
Per Unit
Per Tube*
50 - 50MYR9.82MYR491.00
100 - 450MYR9.525MYR476.25
500 - 950MYR9.144MYR457.20
1000 +MYR8.687MYR434.35

*price indicative

RS Stock No.:
228-2836
Mfr. Part No.:
SIHA24N80AE-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

850V

Series

E

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

184mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

35W

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

59nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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