Vishay E Type N-Channel Power MOSFET, 32 A, 650 V Enhancement, 4-Pin PowerPAK SiHH080N60E-T1-GE3
- RS Stock No.:
- 228-2873
- Mfr. Part No.:
- SiHH080N60E-T1-GE3
- Manufacturer:
- Vishay
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Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 48 | MYR24.245 | MYR48.49 |
| 50 - 98 | MYR22.44 | MYR44.88 |
| 100 - 248 | MYR20.77 | MYR41.54 |
| 250 - 998 | MYR19.225 | MYR38.45 |
| 1000 + | MYR17.795 | MYR35.59 |
*price indicative
- RS Stock No.:
- 228-2873
- Mfr. Part No.:
- SiHH080N60E-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 32A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | E | |
| Package Type | PowerPAK | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 184W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 32A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series E | ||
Package Type PowerPAK | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 184W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 650V Maximum Drain Source Voltage, 32A Maximum Continuous Drain Current - SiHH080N60E-T1-GE3
This power MOSFET is a high-voltage N-channel switching device designed for surface-mount power conversion and control tasks. It operates across a wide ambient range and is intended for applications requiring substantial current handling, efficient switching and compact PCB mounting. The device is manufactured to meet RoHS environmental standards and is supplied in a PowerPAK package for low-profile assembly.
Features and Benefits:
• 650V drain capability enables high-voltage applications
• 32A continuous drain current supports heavy load handling
• 70mΩ Rds(on) reduces conduction losses under load
• 42nC typical gate charge allows faster switching transitions
• 184W power dissipation manages thermal energy in operation
• Vgs limit of 30V permits standard gate‑drive voltages
• 32A continuous drain current supports heavy load handling
• 70mΩ Rds(on) reduces conduction losses under load
• 42nC typical gate charge allows faster switching transitions
• 184W power dissipation manages thermal energy in operation
• Vgs limit of 30V permits standard gate‑drive voltages
Applications
• Suitable for high-voltage switch-mode power supplies
• Ideal for industrial motor inverter stages
• Used with PFC circuits requiring robust switches
• Can be used for renewable‑energy inverter sections
• Suitable for compact surface‑mount power assemblies
• Ideal for industrial motor inverter stages
• Used with PFC circuits requiring robust switches
• Can be used for renewable‑energy inverter sections
• Suitable for compact surface‑mount power assemblies
What temperature extremes can the device tolerate in operation?
It is specified to operate from -55°C up to 150°C, accommodating harsh thermal environments and elevated junction temperatures.
How does the package assist with PCB assembly and thermal behaviour?
The PowerPAK surface‑mount package offers a low‑profile footprint for automated placement and provides a thermal path suited to copper heatsinking on the PCB.
What gate‑drive considerations are required for reliable switching?
Drive circuitry should respect the ±30V gate‑source rating and be sized to supply the typical 42nC gate charge for desired switching speed and EMI control.
Is this device appropriate for automotive systems?
It is not defined as an automotive‑standard device, so designers should verify qualification requirements before using it in certified automotive programmes.
Related links
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