Vishay E Type N-Channel MOSFET, 16.3 A, 850 V Enhancement, 3-Pin TO-247 SIHG21N80AEF-GE3

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Subtotal (1 pack of 2 units)*

MYR28.57

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Units
Per Unit
Per Pack*
2 - 8MYR14.285MYR28.57
10 - 24MYR13.855MYR27.71
26 - 98MYR13.305MYR26.61
100 - 498MYR12.64MYR25.28
500 +MYR11.88MYR23.76

*price indicative

Packaging Options:
RS Stock No.:
228-2868
Mfr. Part No.:
SIHG21N80AEF-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

16.3A

Maximum Drain Source Voltage Vds

850V

Package Type

TO-247

Series

E

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

250mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

47nC

Maximum Power Dissipation Pd

179W

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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