Vishay E Type N-Channel MOSFET, 47 A, 600 V, 3-Pin TO-263 SIHB053N60E-GE3

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Subtotal (1 pack of 2 units)*

MYR62.05

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Per Pack*
2 - 8MYR31.025MYR62.05
10 - 18MYR24.83MYR49.66
20 - 24MYR24.315MYR48.63
26 - 48MYR22.565MYR45.13
50 +MYR20.67MYR41.34

*price indicative

Packaging Options:
RS Stock No.:
225-9910
Mfr. Part No.:
SIHB053N60E-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

47A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

E

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

54mΩ

Typical Gate Charge Qg @ Vgs

92nC

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

278W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Width

9.65 mm

Standards/Approvals

No

Length

10.67mm

Height

15.88mm

Automotive Standard

No

The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.

4th generation E series technology

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Reduced switching and conduction losses

Avalanche energy rated (UIS)

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