Vishay Single E Type N-Channel MOSFET, 47 A, 650 V TO-247AC
- RS Stock No.:
- 180-7345
- Mfr. Part No.:
- SIHG47N65E-GE3
- Manufacturer:
- Vishay
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- RS Stock No.:
- 180-7345
- Mfr. Part No.:
- SIHG47N65E-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 47A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247AC | |
| Series | E | |
| Maximum Drain Source Resistance Rds | 0.072Ω | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 273nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 417W | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 47A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247AC | ||
Series E | ||
Maximum Drain Source Resistance Rds 0.072Ω | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 273nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 417W | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount N-channel TO-247AC-3 MOSFET is a new age product with a drain-source voltage of 650V and a maximum gate-source voltage of 30V. It has a drain-source resistance of 72mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 417W and continuous drain current of 47A. It has a driving voltage of 10V. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Low figure-of-merit (FOM) Ron x Qg
• Low input capacitance (Ciss)
• Operating temperature ranges between -55°C and 150°C
• Reduced switching and conduction losses
• Ultra low gate charge (Qg)
Applications
• Battery chargers
• Fluorescent ballast lighting
• High-intensity discharge (HID)
• Motor drives
• Power factor correction power supplies (PFC)
• Renewable energy
• Server and telecom power supplies
• Solar PV inverters
• Switch mode power supplies (SMPS)
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• UIS tested
Related links
- Vishay Single E Type N-Channel MOSFET 650 V TO-247AC SIHG47N65E-GE3
- Vishay Single E 1 Type N-Channel Power MOSFET 500 V, 3-Pin TO-220AB
- Vishay Single E Type N-Channel MOSFET 600 V TO-220 SIHA22N60E-E3
- Vishay Single E Type N-Channel MOSFET 600 V TO-220
- Vishay E Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-247
- Vishay E Type N-Channel MOSFET 600 V, 3-Pin TO-263
- Vishay E Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- Vishay Single E 1 Type N-Channel Power MOSFET 500 V, 3-Pin TO-220AB SIHP25N50E-GE3