Infineon IPS70R N-Channel MOSFET, 8.5 A, 700 V Enhancement, 3-Pin TO-251 IPS70R600P7SAKMA1
- RS Stock No.:
- 222-4934
- Mfr. Part No.:
- IPS70R600P7SAKMA1
- Manufacturer:
- Infineon
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View bulk pricing optionsSubtotal (1 pack of 20 units)*
MYR61.60
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In Stock
- 740 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 20 | MYR3.08 | MYR61.60 |
| 40 - 80 | MYR2.826 | MYR56.52 |
| 100 - 220 | MYR2.608 | MYR52.16 |
| 240 - 480 | MYR2.418 | MYR48.36 |
| 500 + | MYR2.354 | MYR47.08 |
*price indicative
- RS Stock No.:
- 222-4934
- Mfr. Part No.:
- IPS70R600P7SAKMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8.5A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-251 | |
| Series | IPS70R | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 10.5nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 43.1W | |
| Forward Voltage Vf | 900mV | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 2.4mm | |
| Height | 6.22mm | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8.5A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-251 | ||
Series IPS70R | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 10.5nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 43.1W | ||
Forward Voltage Vf 900mV | ||
Maximum Gate Source Voltage Vgs 16V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 2.4mm | ||
Height 6.22mm | ||
Length 6.73mm | ||
Automotive Standard No | ||
The Infineon developed to serve today’s and especially tomorrow’s trends in flyback topologies – the new 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V
Allowing high speed switching
Integrated protection Zener diode
Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V
Finely graduated portfolio
Related links
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- Infineon CoolMOS N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251 IPSA70R450P7SAKMA1