Infineon IPB60R Type N-Channel MOSFET, 22 A, 600 V Enhancement, 3-Pin TO-263 IPB60R099C7ATMA1

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 2 units)*

MYR55.90

Add to Basket
Select or type quantity
Stock information currently inaccessible
Units
Per Unit
Per Pack*
2 - 8MYR27.95MYR55.90
10 - 98MYR25.635MYR51.27
100 - 248MYR23.645MYR47.29
250 - 498MYR21.965MYR43.93
500 +MYR21.385MYR42.77

*price indicative

Packaging Options:
RS Stock No.:
222-4893
Mfr. Part No.:
IPB60R099C7ATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

22A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

IPB60R

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

99mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.

Reduced switching loss parameters such as Q G, C oss, E oss

Best-in-class figure of merit Q G*R DS(on)

Increased switching frequency

Best R (on)*A in the world

Rugged body diode

Related links