Infineon CoolMOS N-Channel MOSFET, 33 A, 700 V Enhancement, 4-Pin TO-247 IPZ65R065C7XKSA1
- RS Stock No.:
- 222-4728
- Mfr. Part No.:
- IPZ65R065C7XKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 30 units)*
MYR755.70
FREE delivery for orders over RM 150.00
In Stock
- 300 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 30 - 60 | MYR25.19 | MYR755.70 |
| 90 - 120 | MYR24.223 | MYR726.69 |
| 150 + | MYR23.916 | MYR717.48 |
*price indicative
- RS Stock No.:
- 222-4728
- Mfr. Part No.:
- IPZ65R065C7XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-247 | |
| Series | CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 171W | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Forward Voltage Vf | 900mV | |
| Standards/Approvals | No | |
| Width | 5.21mm | |
| Height | 21.1mm | |
| Length | 16.13mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-247 | ||
Series CoolMOS | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 171W | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Forward Voltage Vf 900mV | ||
Standards/Approvals No | ||
Width 5.21mm | ||
Height 21.1mm | ||
Length 16.13mm | ||
Automotive Standard No | ||
The Infineon design of Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
Increased MOSFET dv/dt ruggedness
Better efficiency due to best in class FOM RDS(on)*Eoss and RDS(on)*Qg
Best in class RDS(on) /package
Pb-free plating, halogen free mold compound
Related links
- Infineon CoolMOS N-Channel MOSFET 700 V Enhancement, 4-Pin TO-247 IPZ65R065C7XKSA1
- Infineon CoolMOS N-Channel MOSFET 700 V Enhancement, 3-Pin TO-247 IPW65R048CFDAFKSA1
- Infineon CoolMOS N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251
- Infineon CoolMOS N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251 IPSA70R900P7SAKMA1
- Infineon CoolMOS N-Channel MOSFET 700 V Enhancement, 3-Pin TO-220 IPA70R900P7SXKSA1
- Infineon CoolMOS N-Channel MOSFET 700 V Enhancement, 3-Pin SOT-223
- Infineon CoolMOS N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251 IPSA70R600P7SAKMA1
- Infineon CoolMOS N-Channel MOSFET 700 V Enhancement, 3-Pin TO-251 IPSA70R450P7SAKMA1
