ROHM Dual SP8M4 2 Type N, Type P-Channel MOSFET, 9 A, 30 V Enhancement, 8-Pin SOP SP8M4HZGTB
- RS Stock No.:
- 222-4382
- Mfr. Part No.:
- SP8M4HZGTB
- Manufacturer:
- ROHM
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
MYR51.97
FREE delivery for orders over RM 500.00
Temporarily out of stock
- 2,200 unit(s) shipping from 12 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 45 | MYR10.394 | MYR51.97 |
| 50 - 95 | MYR9.104 | MYR45.52 |
| 100 - 245 | MYR8.088 | MYR40.44 |
| 250 - 995 | MYR7.284 | MYR36.42 |
| 1000 + | MYR7.136 | MYR35.68 |
*price indicative
- RS Stock No.:
- 222-4382
- Mfr. Part No.:
- SP8M4HZGTB
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N, Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SP8M4 | |
| Package Type | SOP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 28mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Width | 6 mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Height | 1.75mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N, Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SP8M4 | ||
Package Type SOP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 28mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Width 6 mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Height 1.75mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The ROHM SP8M4HZG n automotive grade MOSFET that EC-Q101 qualified. Nch+Pch 30V MOSFETs with ESD protection diode is included in the SOP8 package. Ideal for switching applications.
Low on-resistance
Small Surface Mount Package (SOP8)
Pb-free lead plating ; RoHS compliant
AEC-Q101 Qualified
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