DiodesZetex DMT Type N-Channel MOSFET, 14.1 A, 30 V Enhancement, 6-Pin UDFN DMT3006LFDFQ-7
- RS Stock No.:
- 222-2866
- Mfr. Part No.:
- DMT3006LFDFQ-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
MYR42.05
FREE delivery for orders over RM 500.00
Last RS stock
- Final 8,150 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 25 | MYR1.682 | MYR42.05 |
| 50 - 75 | MYR1.557 | MYR38.93 |
| 100 - 225 | MYR1.441 | MYR36.03 |
| 250 - 975 | MYR1.334 | MYR33.35 |
| 1000 + | MYR1.234 | MYR30.85 |
*price indicative
- RS Stock No.:
- 222-2866
- Mfr. Part No.:
- DMT3006LFDFQ-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 14.1A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | DMT | |
| Package Type | UDFN | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.1W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 8.4nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.05mm | |
| Standards/Approvals | No | |
| Height | 0.63mm | |
| Width | 2.05 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 14.1A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series DMT | ||
Package Type UDFN | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.1W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 8.4nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Length 2.05mm | ||
Standards/Approvals No | ||
Height 0.63mm | ||
Width 2.05 mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex N-channel enhancement mode MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.
PCB Footprint of 4mm2
Low Gate Threshold Voltage
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant
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