DiodesZetex DMP Type P-Channel MOSFET, 192 mA, 65 V Enhancement, 3-Pin X1-DFN DMP68D0LFB-7B
- RS Stock No.:
- 222-2864
- Mfr. Part No.:
- DMP68D0LFB-7B
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 50 units)*
MYR28.25
FREE delivery for orders over RM 500.00
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- 9,700 left, ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 50 - 450 | MYR0.565 | MYR28.25 |
| 500 - 950 | MYR0.523 | MYR26.15 |
| 1000 - 2450 | MYR0.484 | MYR24.20 |
| 2500 - 4950 | MYR0.448 | MYR22.40 |
| 5000 + | MYR0.415 | MYR20.75 |
*price indicative
- RS Stock No.:
- 222-2864
- Mfr. Part No.:
- DMP68D0LFB-7B
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 192mA | |
| Maximum Drain Source Voltage Vds | 65V | |
| Package Type | X1-DFN | |
| Series | DMP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.5V | |
| Maximum Power Dissipation Pd | 1.21W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 4.1nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.53mm | |
| Width | 0.68 mm | |
| Standards/Approvals | No | |
| Length | 1.08mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 192mA | ||
Maximum Drain Source Voltage Vds 65V | ||
Package Type X1-DFN | ||
Series DMP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.5V | ||
Maximum Power Dissipation Pd 1.21W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 4.1nC | ||
Maximum Operating Temperature 150°C | ||
Height 0.53mm | ||
Width 0.68 mm | ||
Standards/Approvals No | ||
Length 1.08mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex P-channel enhancement mode MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
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