DiodesZetex DMP Type P-Channel MOSFET, 6.8 A, 30 V Enhancement, 6-Pin UDFN DMP3028LFDEQ-7
- RS Stock No.:
- 222-2858
- Mfr. Part No.:
- DMP3028LFDEQ-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
MYR40.375
FREE delivery for orders over RM 500.00
In Stock
- 1,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 25 | MYR1.615 | MYR40.38 |
| 50 - 75 | MYR1.495 | MYR37.38 |
| 100 - 225 | MYR1.384 | MYR34.60 |
| 250 - 975 | MYR1.28 | MYR32.00 |
| 1000 + | MYR1.185 | MYR29.63 |
*price indicative
- RS Stock No.:
- 222-2858
- Mfr. Part No.:
- DMP3028LFDEQ-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.8A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | UDFN | |
| Series | DMP | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 25mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.03W | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 2.05 mm | |
| Height | 0.63mm | |
| Length | 2.05mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.8A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type UDFN | ||
Series DMP | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 25mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.03W | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 2.05 mm | ||
Height 0.63mm | ||
Length 2.05mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex P-channel enhancement mode MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.
Low Input Capacitance
Low On-Resistance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant
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