Infineon OptiMOS™ 3 N-Channel MOSFET Transistor & Diode, 12 A, 40 V, 3-Pin D2PAK IPB015N04NGATMA1 | RS
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    Infineon OptiMOS™ 3 N-Channel MOSFET Transistor & Diode, 12 A, 40 V, 3-Pin D2PAK IPB015N04NGATMA1

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    Subtotal (1 reel of 1000 units)**

    MYR9,491.00

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    3000 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

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    1000 - 1000MYR9.491MYR9,491.00
    2000 - 3000MYR9.282MYR9,282.00
    4000 +MYR9.111MYR9,111.00

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    RS Stock No.:
    220-7373
    Mfr. Part No.:
    IPB015N04NGATMA1
    Manufacturer:
    Infineon
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    Brand

    Infineon

    Channel Type

    N

    Maximum Continuous Drain Current

    12 A

    Maximum Drain Source Voltage

    40 V

    Series

    OptiMOS™ 3

    Package Type

    D2PAK (TO-263)

    Mounting Type

    Surface Mount

    Pin Count

    3

    Maximum Drain Source Resistance

    0.0015 O

    Channel Mode

    Enhancement

    Maximum Gate Threshold Voltage

    4V

    Number of Elements per Chip

    1

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