Infineon OptiMOS™ 5 Dual N-Channel MOSFET Transistor & Diode, 180 A, 40 V, 7-Pin D2PAK IPB011N04LGATMA1 | RS
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    Infineon OptiMOS™ 5 Dual N-Channel MOSFET Transistor & Diode, 180 A, 40 V, 7-Pin D2PAK IPB011N04LGATMA1

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    Subtotal (1 pack of 2 units)**

    MYR29.40

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    3948 In Global stock for delivery in 4-6 working days, delivery time may vary for certain locations or FTZ*

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    Units
    Per Unit
    Per Pack**
    2 - 248MYR14.70MYR29.40
    250 - 498MYR13.485MYR26.97
    500 +MYR12.45MYR24.90

    **price indicative

    Packaging Options:
    RS Stock No.:
    220-7372
    Mfr. Part No.:
    IPB011N04LGATMA1
    Manufacturer:
    Infineon
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    Brand

    Infineon

    Channel Type

    N

    Maximum Continuous Drain Current

    180 A

    Maximum Drain Source Voltage

    40 V

    Package Type

    TO-263-7

    Series

    OptiMOS™ 5

    Mounting Type

    Surface Mount

    Pin Count

    7

    Maximum Drain Source Resistance

    0.0011 O

    Channel Mode

    Enhancement

    Maximum Gate Threshold Voltage

    2V

    Number of Elements per Chip

    2

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