Infineon CoolMOS CSFD N-Channel MOSFET, 360 A, 650 V Enhancement, 3-Pin TO-247 IPW60R024CFD7XKSA1
- RS Stock No.:
- 219-6016
- Mfr. Part No.:
- IPW60R024CFD7XKSA1
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 30 units)*
MYR1,278.60
FREE delivery for orders over RM 150.00
In Stock
- Plus 30 unit(s) shipping from 19 October 2026
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Units | Per Unit | Per Tube* |
|---|---|---|
| 30 - 60 | MYR42.62 | MYR1,278.60 |
| 90 - 120 | MYR40.981 | MYR1,229.43 |
| 150 + | MYR40.463 | MYR1,213.89 |
*price indicative
- RS Stock No.:
- 219-6016
- Mfr. Part No.:
- IPW60R024CFD7XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 360A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | CoolMOS CSFD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 24mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 183nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 320W | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Width | 21.1mm | |
| Standards/Approvals | No | |
| Height | 5.21mm | |
| Length | 16.13mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 360A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series CoolMOS CSFD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 24mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 183nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 320W | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Width 21.1mm | ||
Standards/Approvals No | ||
Height 5.21mm | ||
Length 16.13mm | ||
Automotive Standard No | ||
The Infineon CoolMOS CFD7 Superjunction MOSFET IPW60R024CFD7 in 600V is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET family it comes with reduced gate charge, improved turn-off behaviour and up to 69% reduced reverse recovery charge compared to competitors.
Ultra-fast body diode
Best-in-class reverse recovery charge (Qrr)
Improved reverse diode dv/dt and dif/dt ruggedness
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