Infineon HEXFET N-Channel MOSFET, 28 A, 150 V, 2-Pin DirectFET IRF6775MTRPBF
- RS Stock No.:
- 218-3102
- Mfr. Part No.:
- IRF6775MTRPBF
- Manufacturer:
- Infineon
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View bulk pricing optionsSubtotal (1 pack of 10 units)*
MYR59.90
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- Plus 4,270 unit(s) shipping from 19 October 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 1190 | MYR5.99 | MYR59.90 |
| 1200 - 2390 | MYR5.487 | MYR54.87 |
| 2400 + | MYR5.067 | MYR50.67 |
*price indicative
- RS Stock No.:
- 218-3102
- Mfr. Part No.:
- IRF6775MTRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 28A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | HEXFET | |
| Package Type | DirectFET | |
| Mount Type | Surface | |
| Pin Count | 2 | |
| Maximum Drain Source Resistance Rds | 56mΩ | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Power Dissipation Pd | 89W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.3V | |
| Standards/Approvals | No | |
| Width | 3.95mm | |
| Height | 680μm | |
| Length | 4.85mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 28A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series HEXFET | ||
Package Type DirectFET | ||
Mount Type Surface | ||
Pin Count 2 | ||
Maximum Drain Source Resistance Rds 56mΩ | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Power Dissipation Pd 89W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.3V | ||
Standards/Approvals No | ||
Width 3.95mm | ||
Height 680μm | ||
Length 4.85mm | ||
Automotive Standard No | ||
The Infineon 150V Single N-channel HEXFET power MOSFET. This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. The lower inductance improves EMI performance by reducing the voltage ringing that accompanies fast current transients.
Latest MOSFET Silicon technology
Dual sided cooling compatible
Compatible with existing surface mount technologies
Lead-Free
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