Infineon OptiMOS-T2 Type N-Channel MOSFET, 120 A, 60 V Enhancement, 3-Pin TO-263 IPB120N06S4H1ATMA2

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 5 units)*

MYR97.85

Add to Basket
Select or type quantity
In Stock
  • Plus 950 unit(s) shipping from 13 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Pack*
5 - 245MYR19.57MYR97.85
250 - 495MYR17.94MYR89.70
500 +MYR16.554MYR82.77

*price indicative

Packaging Options:
RS Stock No.:
218-3033
Mfr. Part No.:
IPB120N06S4H1ATMA2
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-263

Series

OptiMOS-T2

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

2mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon OptiMOS™-T2 series N-channel power MOSFET. It has low switching and conduction power losses for high thermal efficiency.

N-channel - Enhancement mode

175°C operating temperature

100% Avalanche tested

Related links