Infineon IAUA N-Channel MOSFET, 200 A, 40 V Enhancement, 8-Pin PG-HSOF-5 IAUA200N04S5N010AUMA1
- RS Stock No.:
- 218-2988
- Mfr. Part No.:
- IAUA200N04S5N010AUMA1
- Manufacturer:
- Infineon
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MYR64.02
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 495 | MYR12.804 | MYR64.02 |
| 500 - 995 | MYR11.75 | MYR58.75 |
| 1000 + | MYR10.844 | MYR54.22 |
*price indicative
- RS Stock No.:
- 218-2988
- Mfr. Part No.:
- IAUA200N04S5N010AUMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 200A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IAUA | |
| Package Type | PG-HSOF-5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 200A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IAUA | ||
Package Type PG-HSOF-5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon IAUA Series MOSFET, 40V Maximum Drain-Source Voltage, 200A Maximum Continuous Drain Current - IAUA200N04S5N010AUMA1
This MOSFET is a high-current N-channel transistor designed for surface-mounted power switching and control in demanding environments. It operates across an extended temperature range and supports automotive-level qualification, making it suitable for applications requiring robust thermal tolerance and sustained high drain current.
Features and Benefits:
• 1mΩ RDS(on) minimises conduction losses
• 200A continuous current enables heavy-load switching
• 40V drain voltage supports low-voltage power systems
• 80nC gate charge allows predictable switching behaviour
• 81W power dissipation manages substantial thermal load
• 200A continuous current enables heavy-load switching
• 40V drain voltage supports low-voltage power systems
• 80nC gate charge allows predictable switching behaviour
• 81W power dissipation manages substantial thermal load
Applications
• Suitable for automotive power management modules
• Ideal for high-current motor driver stages
• Used with DC-DC converters in power distribution
• Can be used for load switching in industrial controls
• Ideal for high-current motor driver stages
• Used with DC-DC converters in power distribution
• Can be used for load switching in industrial controls
What gate voltage limits must be observed?
The device accepts gate drive up to 20V and should not exceed that Value to prevent gate stress.
How does it perform in extreme temperatures?
It operates from -55°C up to 175°C, enabling use in environments with wide thermal variation.
What package and mounting style are provided?
The component is supplied in a PG‑HSOF‑5 package intended for surface mounting.
Which automotive qualification applies to this part?
It meets the AEC‑Q101 standard for automotive electronic components.
Related links
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